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Pressure Coefficient of the Band Gap in Mg 2 Si, Mg 2 Ge, and Mg 2 Sn
Author(s) -
Stella A.,
Brothers A. D.,
Hopkins R. H.,
Lynch D. W.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670230231
Subject(s) - band gap , analytical chemistry (journal) , pressure coefficient , electrical resistivity and conductivity , valence (chemistry) , materials science , direct and indirect band gaps , germanium , valence band , semimetal , conduction band , condensed matter physics , temperature coefficient , mineralogy , crystallography , silicon , chemistry , physics , thermodynamics , electron , metallurgy , organic chemistry , chromatography , quantum mechanics , composite material
The pressure deri vative of the band gap, (∂ E /∂ P ) T , has been determined to be + 3 × 10 −6 e Vbar −1 for Mg 2 Sn by measurements of the pressure derivative of the electrical conductivity. Similar measurements on Mg 2 Si and Mg 2 Ge were inconclusive, but estimates of this parameter were made from the shift of the optical obsorption edge with pressure. (∂ E /∂ P ) T = (0 ± 0.5) × 10 −6 e Vbar −1 for both compounds. The similarity of the coefficients for Mg 2 Si and Mg 2 Ge suggests that the symmetries of the band edges of both compounds are similar, while either the conduction band edge, the valence band edge, or both edges in Mg 2 Sn may have a different symmetry.