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Thermoelectric Power in Amorphous Silicon
Author(s) -
Grigorovici R.,
Croitoru N.,
Dévényi A.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670230223
Subject(s) - seebeck coefficient , materials science , amorphous solid , condensed matter physics , amorphous silicon , silicon , heterojunction , electrical resistivity and conductivity , thermoelectric effect , thermoelectric materials , crystalline silicon , engineering physics , optoelectronics , thermal conductivity , thermodynamics , crystallography , composite material , electrical engineering , chemistry , physics , engineering
An investigation is made of the temperature dependence of the Seebeck coefficient of vacuum‐deposited amorphous silicon (a‐Si) layers. The temperature dependence of the Fermi level is found to be in good agreement with previous studies of the temperature dependence of the electrical conductivity and the rectifying properties of n‐Si/a‐Si heterojunctions. The present results for a‐Si are compared with those for crystalline Si and crystalline and amorphous Ge.