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The Influence of Vacancies and Impurities on the Damage Production in Platinum Electron‐Irradiated at 90 °K
Author(s) -
Duesing G.,
Hemmerich H.,
Meissner D.,
Schilling W.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670230207
Subject(s) - irradiation , impurity , radiation damage , materials science , electron beam processing , platinum , quenching (fluorescence) , electron , annealing (glass) , analytical chemistry (journal) , vacancy defect , radiochemistry , atomic physics , crystallography , chemistry , metallurgy , nuclear physics , optics , fluorescence , physics , biochemistry , catalysis , organic chemistry , chromatography
In platinum foils of 99.999 and 99.9% purity different vacancy concentrations are frozen in by quenching. The foils are then irradiated with 3 MeV electrons at 90 °K. The difference between the radiation damage build‐up in these foils and the damage built‐up in annealed foils which are irradiated simultaneously is investigated up to electron doses corresponding to induced resistivities of 3 × 10 −7 Ωcm. It is found that 1. pre‐quenching can reduce the initial damage rate by a factor of more than 20; 2. the initial damage rate of the annealed samples is independent of their purity; 3. with further irradiation, the rate of decrease of the damage rate for the annealed samples increases with the purity of the samples; 4. for large damages the dose dependence of the damage lies between Δϱ ∼ φ and Δϱ ∼ φ 1/2; . The results can easily be explained by interstitials which migrate freely at 90 °K and are either annihilated by vacancies or converted into another interstitial configuration at impurities. The direct production of immobile interstitials at 90 °K can be excluded.