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Optical Measurement of Compensation in Highly Doped Silicon
Author(s) -
à la Guillaume C. Benoit,
Voos M.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670230129
Subject(s) - silicon , impurity , doping , recombination , compensation (psychology) , materials science , atomic physics , radiative transfer , optoelectronics , electron , molecular physics , optics , physics , chemistry , nuclear physics , psychology , biochemistry , quantum mechanics , psychoanalysis , gene
The radiative recombination spectrum of silicon which is highly doped with 7 × 10 18 cm −3 Sb atoms is analysed between 4.2 and 110 °K. From these measurements, it can be deduced that the silicon is compensated, and it is also possible to determine the nature of the compensating impurity. It is shown that the compensating impurity concentration can be obtained from the Shockley‐Read theory which allows a calculation to be made of the ratio of the hole and electron capture probabilities for such a recombination centre.