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Spectral Response of p‐n Heterojunctions
Author(s) -
Tansley T. L.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670230124
Subject(s) - heterojunction , photocurrent , semiconductor , materials science , absorption (acoustics) , band gap , optoelectronics , deposition (geology) , photoconductivity , condensed matter physics , physics , paleontology , sediment , composite material , biology
Semiconductor heterojunctions have been grown by the deposition of III‐V solid solutions on GaAs substrates and their optical properties studied in detail. While the general picture is that deduced from simple theory, some interesting second order phenomena have been observed. Effects considered include absorption in the wide gap material, loss of photocurrent due to the conduction band spike and notch and high field absorption effects in the narrow gap material transition region. Experimental results are presented and the incidence of these effects in real heterojunctions discussed.