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Quenched‐in Levels in p‐Type Silicon
Author(s) -
Elstner L.,
Kamprath W.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670220227
Subject(s) - silicon , annealing (glass) , vacancy defect , electron beam processing , materials science , electron , irradiation , hall effect , condensed matter physics , optoelectronics , metallurgy , electrical resistivity and conductivity , physics , nuclear physics , quantum mechanics
Hall effect measurements are described on heat treated and quenched p‐type silicon crystals. Donor centres appear at ( E v + 0.37) eV after this treatment. Introduction and annealing studies indicate that these centres are vacancy clusters. Similar investigations are made on electron irradiated samples.