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The Influence of Carbon on Precipitation of Copper in Silicon Single Crystals
Author(s) -
Fiermans L.,
Vennik J.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670220218
Subject(s) - copper , dislocation , precipitation , climb , silicon , silicon carbide , materials science , carbon fibers , indentation , crystallography , carbide , enhanced data rates for gsm evolution , metallurgy , analytical chemistry (journal) , composite material , chemistry , thermodynamics , physics , chromatography , meteorology , composite number , telecommunications , computer science
The effect of carbon on the copper precipitation behaviour of dislocation‐free silicon crystals with low oxygen concentration, is studied by infra‐red microscopy, high‐resolution X‐ray topography and infra‐red spectrophotometry. A growth mechanism is proposed for the copper precipitates which is based on indentation at silicon carbide or silica precipitates, followed by climb of dislocation loops. The main type of dislocation likely to produce the observed pattern, is thought to be the 〈100〉 edge dislocations.