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Theory of Spin‐Lattice Relaxation of Conduction Electrons of Ionic Semiconductors at Extremely High Magnetic Fields
Author(s) -
Kalashnikov V. P.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670210239
Subject(s) - condensed matter physics , electron , spins , thermal conduction , phonon , physics , spin polarization , scattering , ionic bonding , magnetic field , spin–lattice relaxation , ion , paramagnetism , quantum mechanics
A longitudinal spin‐lattice relaxation time T 1 is considered for conduction electrons due to optical phonons scattering in a high magnetic field. The temperature and field dependences of T 1 are obtained for the quantum limit and for various mutual locations of the Fermi level and the two lowest spin sublevels of the carriers. It is shown that the deviation of the phonon distribution from thermal equilibrium due to the interaction with the spins of the conduction electrons is small, and a phonon bottleneck should not occur, in contrast with the case of spin‐lattice relaxation of localized spins.