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Effect of Donor Impurity Concentration on the Piezoresistance of n‐Type GaSb
Author(s) -
Averous M.,
Bougnot G.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670210226
Subject(s) - maxima and minima , thermal conduction , conduction band , materials science , impurity , condensed matter physics , stress (linguistics) , type (biology) , activation energy , crystal (programming language) , chemistry , mathematics , composite material , physics , mathematical analysis , electron , ecology , linguistics , philosophy , organic chemistry , quantum mechanics , computer science , biology , programming language
Measurements are made of the change of resistance under uniaxial stress of several single crystal samples of n‐type GaSb with different carrier concentrations (5.7 × 10 17 to 1.6 × 10 18 donors/cm 3 ) from 77 to 300 °K. The piezoresistance coefficients as functions of temperature are found to pass through an extremum. This extremum shifts to higher temperatures as N d increases. It is concluded that the dominant effect of uniaxial stress, in the presence of mixed conduction involving the two conduction band minima (lowest minimum (000) and the next minimum (111)), is to cause a change in the energy separation of these minima.