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Influence of Defects and of the Interaction between them on Phonon Scattering in Heavily Doped Ge and Si Crystals
Author(s) -
Arasli D. G.,
Aliev M. I.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670210223
Subject(s) - impurity , phonon , scattering , phonon scattering , doping , condensed matter physics , materials science , thermal conductivity , chemistry , optics , physics , organic chemistry , composite material
Measurements are made of the thermal conductivity x of highly doped Ge and Si monocrystals. At 300 °K x starts to decrease with increasing impurity concentration for concentrations greater than 10 17 cm −3 in Ge and 10 18 cm −3 in Si. Heat transfer in these crystals occurs primarily via the phonons and the observed decrease of x as a function of concentration is connected with phonon scattering. An estimate is made of the thermal resistance due to impurities, complexes of atoms of the doping impurity, vacancies, and carriers. Hence, the types of defect which are the main centres of phonon scattering can be determined. It is shown that in p‐Ge the additional thermal resistance Δ W is due to phonon‐scattering by the impurities and carriers, but in n‐Ge phonons are scattered by complexes and vacancies. In n‐Si Δ W is caused primarily by phonon scattering by impurities.