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Microprobe Investigations of Copper Precipitates in Silicon Single Crystals
Author(s) -
Fiermans L.,
Vennik J.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670210221
Subject(s) - microprobe , copper , nucleation , materials science , silicon , electron microprobe , metallurgy , microanalysis , precipitation , indentation , analytical chemistry (journal) , mineralogy , chemistry , composite material , physics , organic chemistry , chromatography , meteorology
Microprobe investigations of copper precipitates in silicon single crystals, confirm and extend the geometrical analysis performed by means of infra‐red microscopy. Evidence is obtained which proves that the concentration of carbon or oxygen is enhanced at the centres of the precipitates. This is in agreement with the proposed mechanism for the nucleation and growth of the copper precipitates i.e. indentation at SiO 2 or SiC centres. Some effects concerning surface contamination are also examined.