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Carrier Recombination in Nickel Doped Germanium from Lifetime and Noise Measurements
Author(s) -
Gouskov L.,
Lecoy G.,
Llinares C.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670210220
Subject(s) - germanium , recombination , doping , photoconductivity , materials science , noise (video) , nickel , optoelectronics , free carrier , atomic physics , physics , silicon , chemistry , computer science , metallurgy , biochemistry , artificial intelligence , image (mathematics) , gene
A study is made in order to precise the transition processes for free carriers between the bands and the well‐controlled deep Ni levels in Ge from 100 to 350 °K. The experimental work involves measurements of the lifetime of the photoconductive decay and the generation‐recombination noise.