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Study of Electron Lifetime in p‐Si
Author(s) -
Abdullaev G. B.,
IskenderZade Z. A.,
Dzhafarova E. A.,
Chelnokov V. E.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670210142
Subject(s) - valence band , atmospheric temperature range , recombination , range (aeronautics) , electron , materials science , atomic physics , enhanced data rates for gsm evolution , silicon , condensed matter physics , chemistry , analytical chemistry (journal) , optoelectronics , band gap , physics , thermodynamics , nuclear physics , telecommunications , biochemistry , gene , computer science , composite material , chromatography
The lifetime τ n of minority carriers in p‐Si is studied over a wide range of temperatures (17 to 245 °C) and injection levels (0.05 to 6). It is found that at a temperature of T ≈ 160 °C and within the injection level range Δ = 0.05 to 2.5, τ b ≈ 35 μs; below this temperature, τ n increases from 1 to 20 μm, and above it, decreases from 160 to 55 μs with increasing directly flowing current through the p‐n junction. Comparison of the experimental results with the Shockley‐Read theory indicates that within the range Δ = 0.5 to 6, recombination takes place via donor‐type centres (σ n /σ p = 1.7) situated (0.36 ± 0.02) eV above the edge of the valence band. These levels are therefore attributed to atoms of gold in the p‐Si.