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External Photoeffect from Sensitizing Dyes Adsorbed on Semiconductors
Author(s) -
Akimov I. A.,
Bentsa V. M.,
Vilesov F. I.,
Terenin A. N.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670200241
Subject(s) - semiconductor , conduction band , excited state , adsorption , valence band , valence (chemistry) , materials science , chemistry , atomic physics , optoelectronics , band gap , physics , electron , quantum mechanics , organic chemistry
A study is made of the spectral distributions of the internal and external photoeffect for ZnO, AgBr, and TlJ before and after dyeing by sensitizers. The results obtained indicate that the excited dye level is situated below the bottom of the conduction band of the n‐type semiconductors (ZnO, AgBr), and that the top of the valence band of the p‐type semiconductor (TlJ) is situated below the ground level of the dye sensitizer. Hence, the spectral sensitization does not occur by charge transfer, but by energy transfer.