Premium
Electric Conductivity Studies of p‐GaTe Polycrystals and Single Crystals in Strong Electric Fields
Author(s) -
Abdullaev G. B.,
Guseinova E. S.,
Tagiev B. G.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670200202
Subject(s) - electric field , condensed matter physics , dielectric , physics , electrical resistivity and conductivity , atmospheric temperature range , crystallite , sigma , thermodynamics , chemistry , crystallography , quantum mechanics
It is shown that in the temperature range 77 to 220 °K and under fields increasing to 3 × 10 4 V/cm, conduction both of polycrystalline p‐GaTe and of the single crystal increases according to Frenkel's formula \documentclass{article}\pagestyle{empty}\begin{document}$ (\sigma = \sigma _0 \,{\rm e}^{\beta \sqrt E }) $\end{document} . From the formula \documentclass{article}\pagestyle{empty}\begin{document}$ \beta = \frac{{\sqrt {e^3 } }}{{kT\sqrt \varepsilon }} $\end{document} and by determing the slope of the isotherms lg σ= f (√ E ), the dielectric constants of p‐GaTe, pertaining to the electric part of polarization, are found to be equal to six and four both along and the layers, respectively. By extrapolating with respect to the cross‐over point of isopotentials lg σ = f (1/ T ), the metallization temperature T M = 20000 °K is determined, from which the value of kT M = 1.74 eV is found. This agrees with the value for the gap width of p‐GaTe at absolute zero. By extrapolating the isotherms and finding a consistent solution to thier equation for the electric strength, a value is obtained which is approximately equal to 6.5 × 10 5 V/cm.