Electrical and Photovoltaic Properties of PbSSi Heterodiodes | Zendy

Sigmund H. | Zendy; Berchtold K. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Electrical and Photovoltaic Properties of PbSSi Heterodiodes

Author(s) -

Sigmund H.,

Berchtold K.

Publication year - 1967

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.19670200122

Subject(s) - materials science , optoelectronics , heterojunction , quantum tunnelling , photovoltaic system , wavelength , atmospheric temperature range , range (aeronautics) , composite material , electrical engineering , physics , meteorology , engineering

The electrical and photo‐electrical properties of PbS‐Si heterodiodes are investigated. The PbS films are grown on Si by a water‐solution reaction at room temperature. The forward and reverse characteristic is similar to that for other heterojunctions (recombination‐tunneling mechanism). The spectral response is in the wavelength range 1 to 3 μm at room temperature. The sensibility in the PbS peak is about 6 × 10 3 V/W.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research