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Electrical and Photovoltaic Properties of PbSSi Heterodiodes
Author(s) -
Sigmund H.,
Berchtold K.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670200122
Subject(s) - materials science , optoelectronics , heterojunction , quantum tunnelling , photovoltaic system , wavelength , atmospheric temperature range , range (aeronautics) , composite material , electrical engineering , physics , meteorology , engineering
The electrical and photo‐electrical properties of PbS‐Si heterodiodes are investigated. The PbS films are grown on Si by a water‐solution reaction at room temperature. The forward and reverse characteristic is similar to that for other heterojunctions (recombination‐tunneling mechanism). The spectral response is in the wavelength range 1 to 3 μm at room temperature. The sensibility in the PbS peak is about 6 × 10 3 V/W.