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The effect of heat treatment on silicon nitride layers on silicon
Author(s) -
Thomas D. J. D.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670200112
Subject(s) - silicon , materials science , silicon nitride , layer (electronics) , substrate (aquarium) , locos , nitride , composite material , slip (aerodynamics) , strained silicon , optoelectronics , crystalline silicon , physics , amorphous silicon , thermodynamics , geology , oceanography
On heat treatment, structural changes may occur in silicon nitride layers deposited on silicon substratres by the glow discharge technique. The causes of the cracks and holes produced in the layer are shown to be thermal stresses and lack of adhesion between the layer and the substrate. Layers produced at above 600 °C, and particularly from silicon tetrachloride, remain perfect on heating up to 1200 °C. Dislocations are introduced into the silicon substrate at defects in the nitride layer. Deformation is produced by slip in the (111) planes parallel to the silicon surface. No defects are introduced into the silicon if the nitride layer remains perfect.