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The Condition for Negative Absorption in Semiconductors
Author(s) -
Landsberg P. T.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670190229
Subject(s) - phonon , atomic physics , electron , semiconductor , radiative transfer , photon , physics , condensed matter physics , absorption (acoustics) , photon energy , quasi fermi level , conduction band , valence (chemistry) , thermal conduction , absorption rate , chemistry , quantum mechanics , optics , chromatography
Abstract For a given photon energy h v the condition that the stimulated emission rate exceeds the absorption rate is F c ‐ F v > h v when the F 's are quasi‐Fermi levels for conduction and valence bands. This holds also if phonons are involved. The condition is generalised here to the case where several electrons and phonons are involved and localised or band states play a part. The condition becomes: The drop in the quasi‐Gibbs free energy of the electron system as a result of one radiative transition must exceed h v .