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The Effect of a Magnetic Field upon Illuminated InAs p‐n Junctions
Author(s) -
Mikhailova M. P.,
Nasledov D. N.,
Slobodchikov S. V.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670190144
Subject(s) - magnetic field , condensed matter physics , electric field , inversion (geology) , physics , reverse bias , materials science , voltage , quantum mechanics , paleontology , structural basin , biology
A study is made of variations in photoresponse with strength of magnetic field in unbiased and reverse biased InAs p‐n junctions. This provides information on the combined effect of electric and magnetic fields, and illumination on p‐n junctions. The curves of photo‐electro‐magnetic e.m.f. against magnetic field strength for reverse biased p‐n junctions show linear inversion‐free regions. The results are analysed on the basis of the theory of the PEM effect in p‐n junctions.