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On the mechanism of lattice electromigration in metals
Author(s) -
Klotsman S. M.,
Timofeev A. N.,
Trakhtenberg I. Sh.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660180237
Subject(s) - impurity , ion , residual resistivity , electrical resistivity and conductivity , lattice (music) , interstitial defect , scattering , condensed matter physics , copper , materials science , electromigration , chemistry , doping , physics , metallurgy , organic chemistry , quantum mechanics , acoustics , optics , composite material
Values of the “residual resistivity” B for ions of silver diffused into copper and gold over a temperature range above 0,8 T m are calculated on the basis of data taken from a previous paper of Archipova, Klotsman, Timofeev, and Trakhtenberg [1]. These values of B are compared with values of the residual resistivity for substitution and interstitial impurity ions in group I noble metals. This shows that scattering by the diffused ions occupying interstitial positions gives the main contribution to the driving force of the activated complex. The observed temperature dependence of B and the order of magnitude of the temperature coefficients ( B −1 ∂ B /∂ T ≈ 10 −4 deg −1 ) can be explained by the interaction of impurity ions in interstitial positions with the surrounding lattice. As a first approximation this interaction can be considered as a mutual deformation of the impurity ion and the lattice. Using this approximation it is possible to estimate the magnitude of B for impurities from various parts of the periodic table in a given lattice.