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Point defect electron scattering in Beryllium
Author(s) -
van Torne L. I.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660180225
Subject(s) - beryllium , octahedron , vacancy defect , tetrahedron , electrical resistivity and conductivity , scattering , crystallographic defect , materials science , electron scattering , electron , diffraction , crystallography , atomic physics , condensed matter physics , molecular physics , chemistry , physics , crystal structure , optics , nuclear physics , organic chemistry , quantum mechanics
Abstract The dc resistivity due to electron scattering from a vacancy, an octahedral interstitial, and a tetrahedral interstitial in beryllium was computed by application of the diffraction model concept of pseudopotentials in the theory of metals. The resistivity values corresponding to one atomic percent concentration of each defect type are: octahedral interstitials, 0.283 μΩ cm; vacancies, 0.296 μΩ cm; and tetrahedral interstitials, 0.249 μΩ cm.