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The effective mass of electrons in (InSb) x ·(InTe) 1−x crystals
Author(s) -
Molodyan I. P.,
Nasledov D. N.,
Radautsan S. I.,
Sidorov V. G.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660180219
Subject(s) - solid solution , seebeck coefficient , tellurium , electron , effective mass (spring–mass system) , condensed matter physics , doping , hall effect , atmospheric temperature range , thermoelectric effect , chemistry , conductivity , electrical resistivity and conductivity , nernst effect , materials science , analytical chemistry (journal) , nernst equation , physics , thermodynamics , inorganic chemistry , nuclear physics , electrode , quantum mechanics , chromatography , organic chemistry
Measurements of the thermoelectric power, transverse Nernst‐Ettinghausen effect, conductivity, and Hall effect allow the concentration and temperature dependence of the electronic effective mass m * to be calculated for crystals of the solid solution (InSb) x (InTe) 1—x (for × = 1 to 0.85) in the temperature range 100 to 370 °K. Solid solutions having × > 0.99 (I) behave like InSb doped with tellurium, and crystals of this type having electron concentrations ( n ) greater than 2 × 10 18 cm −3 show an m * ( n ) dependence which differs from that predicted by Kane. Solid solutions with x ≦ 0.99 (II) show a different temperature dependence of m * from those with x > 0.99.