Premium
Photoconductivity and drift mobilities in single crystal realgar (As 4 S 4 )
Author(s) -
Street G. B.,
Gill W. D.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660180213
Subject(s) - photoconductivity , electron mobility , band gap , materials science , impurity , electron , crystal (programming language) , charge carrier , conduction band , condensed matter physics , chemistry , optoelectronics , physics , organic chemistry , quantum mechanics , computer science , programming language
The photoconductivity and carrier mobilities of synthetic crystals of realgar (As 4 S 4 ) have been investigated. A sharp increase in the photoresponse at short wavelengths is attributed to an energy gap of (2.40 ± 0.05) eV. An additional weak peak in the photoresponse at 600 nm is due to free hole formation at defect or impurity sites. Electron and hole mobilities have been measured over the temperature range from 250 to 470 °K. At 25 °C the hole mobility was 12 cm 2 V −1 s −1 and the electron mobility 2 × 10 −2 cm 2 V −1 s −1 . The hole transport can be described by band conduction controlled by lattice scattering. The electron changes is consistent with an intermolecular hopping process which at low temperatures transport to a trap‐controlled mechanism.