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Forward bias current‐voltage characteristics for a heterojunction in which tunnelling dominates
Author(s) -
Tansley T. L.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660180111
Subject(s) - wkb approximation , quantum tunnelling , heterojunction , biasing , current (fluid) , voltage , expression (computer science) , physics , condensed matter physics , statistical physics , quantum mechanics , computer science , thermodynamics , programming language
The forward characteristics of a variety of heterojunction pairs have been observed to fit an empirical expression relating current, voltage, and temperature. This communication demonstrates that, given one basic assumption, the WKB approximation to tunnelling probability yields an analytic expression involving these three variables, which is found to be in qualitative agreement with experiment. Numerical results have been tested where possible and a resultant quantitative agreement is noted.