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Hall Effect and Extrinsic Photoconductivity in n‐Type InSb
Author(s) -
Mitchell W. H.,
Putley E. H.,
Shaw N.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660170217
Subject(s) - photoconductivity , hall effect , condensed matter physics , magnetic field , electric field , materials science , physics , optoelectronics , quantum mechanics
A differential method of measuring the Hall effect in the presence of a large constant magnetic field is described. This is used to measure the dependence of the Hall coefficient upon electric field in n‐type InSb at and below 4 °K under conditions where the magnetic freeze‐out is significant. These results show that in the samples studied changes in mobility made the major contribution to the sub‐mm extrinsic photoconductivity.
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