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On the Structure of the Bottom of the Conduction Band in GaAs
Author(s) -
Kravchenko A. F.,
Sardaryan V. S.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660170203
Subject(s) - condensed matter physics , magnetoresistance , effective mass (spring–mass system) , hall effect , anisotropy , conduction band , dipole , materials science , thermal conduction , scattering , electronic band structure , transverse plane , electron , electrical resistivity and conductivity , magnetic field , physics , optics , structural engineering , engineering , quantum mechanics , composite material
The magnetoresistance and Hall effect are studied for oriented specimens of n‐type GaAs with carrier concentrations 5 × 10 15 to 1 × 10 18 cm −3 at temperatures 78 to 800 °K. Almost all the samples show anisotropy of the transverse magnetoresistance and non‐vanishing longitudinal magnetoresistance. From the temperature dependence of the Hall coefficient, the energy position of the minima and the effective mass are estimated: ΔW = 0.12 to 0.36 eV, m 2 *= 1.2 m 0 , m * ∥ = 1.98 m 0 , m * ⊥ = 0.37 m 0 . A model for the band structure in the vicinity of the conduction band edge is discussed and shown to be consistent with the experimental data when anisotropy of electron scattering by weak oriented dipoles is taken into account.