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Properties of Recrystallized Evaporated CdS Layers
Author(s) -
Böer K. W.,
Feitknecht J. W.,
Kannenberg D. G.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660160236
Subject(s) - materials science , photosensitivity , penning trap , dark current , analytical chemistry (journal) , recrystallization (geology) , electron , substrate (aquarium) , crystal (programming language) , excitation , optoelectronics , chemistry , photodetector , chromatography , paleontology , physics , oceanography , electrical engineering , engineering , quantum mechanics , computer science , programming language , biology , geology
Abstract Recrystallization of evaporated CdS layers in an environment containing N 2 , HCl, O 2 , Cu, and CdS at 630°C are investigated using electron microscopic and electron probe analysis, and show an oxygen enhanced single crystal growth with preferably (001) parallel to the substrate surface. Photoconducting layers of unusual high frequency response for modulated light excitation (35% value at about 100 KHz), low electronic noise (above 60 Hz due to density fluctuation) and high photosensitivity, at 170°K with a maximum gain factor of 10 8 , and a “useful” light/dark current ratio (after 1 s decay) of 10 7 at 100 ft.‐c are described. These layers have a trap density of ≳ 3 × 10 11 eV −1 cm −3 between 0.3 and 0.4 eV and show with 100 ft.‐c bias illumination at room temperature electron lifetime (30 μs) determined relaxation.