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On the Theory of Anisotropic Thermoelectric power in Semiconductros
Author(s) -
Samoilovich A. G.,
Nitsovich M. V.,
Nitsovich V. M.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660160210
Subject(s) - anisotropy , seebeck coefficient , thermoelectric effect , condensed matter physics , scattering , power (physics) , materials science , impurity , physics , optics , thermodynamics , quantum mechanics
Possible mechanisms for the appearance of an anisotropic thermoelectric power in semi conductors are examined using simple models. It is shown that an anisotropic thermoelectric power may arise both as a result of combined phonon and impurity scattering, and in the presence of two types of carriers if at least one type of carrier has an anisotropic effective mass. The effect of different parameters on the magnitude of the anisotropy in the thermoelectric power is examined and it is shown that for reasonable values of these parameters the anisotropy may be significant.