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Rectifying and Photoconductive Properties of p‐GaSe Single Crystals
Author(s) -
Abdullaev G. B.,
Akhundov M. R.,
Akhundov G. A.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660160120
Subject(s) - photocurrent , photoconductivity , rectification , photoresistor , materials science , optoelectronics , diode , voltage , exponential function , current (fluid) , temperature coefficient , analytical chemistry (journal) , chemistry , physics , mathematics , mathematical analysis , chromatography , quantum mechanics , composite material , thermodynamics
The current‐voltage characteristics of a CdGaSeBi diode structure are given for different values of temperature and illumination. The photovoltage and photocurrent characteristics and the photocurrent spectral distribution are also presented. The mean rectification coefficient is 10 4 at U = 2 V. The activation energies obtained from the temperature dependence of the exponential part of the forward current characteristic for different samples are grouped around the values 0.60 and 0.34 eV. The values of the open circuit voltage ( V oc ) and of the short circuit current ( I sc ) lie between 250 to 450 mV and 300 to 900 μA/cm 2 respectively. It is found that photocells based on GaSe have a better time‐response than GaSe photoresistors.