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Effect of Neutron and γ‐Ray Irradiation on the Carrier Lifetime and Detectivity of InSb
Author(s) -
Euthymiou P. C.,
Tanenbaum A. L.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660160116
Subject(s) - irradiation , neutron , annealing (glass) , materials science , liquid nitrogen , neutron temperature , radiation damage , electron , carrier lifetime , x ray , neutron irradiation , electron beam processing , crystal (programming language) , radiochemistry , optoelectronics , optics , nuclear physics , chemistry , physics , silicon , composite material , organic chemistry , computer science , programming language
Abstract Single crystals of p‐type InSb were irradiated by 4.5 MeV neutrons or γ‐rays at liquid nitrogen temperature. The damage produced by neutron irradiation resulted in a small decrease of the carrier lifetime and a large decrease of the detectivity of the crystal. The damage produced by γ‐rays resulted in an increase or decrease of lifetime, the change depending on how strongly p‐type the crystal was. The detectivity was decreased upon γ‐irradiation. Annealing experiments show that neutron damage is permanent while γ‐ray defects can be completely annihilated near or above room temperature, giving a similar result as electron irradiation. Analysis of the effects on lifetime and detectivity shows that neutron damage effects, although severe and permanent, produce no important decrease of lifetime.