Premium
Nuclear Polarization by Hot Carrier Flow in Semiconductors
Author(s) -
Kalashnikov V. P.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660150206
Subject(s) - electron , condensed matter physics , hyperfine structure , thermal conduction , magnetization , polarization (electrochemistry) , semiconductor , physics , relaxation (psychology) , spin polarization , magnetic field , electric field , charge carrier , atomic physics , chemistry , nuclear physics , psychology , social psychology , quantum mechanics , thermodynamics
The nuclear polarization resulting from the interaction of the nuclei with a non‐equilibrium, steady‐state, distribution of hot conduction electrons generated by crossed static magnetic and strong electric fields is investigated theoretically. The effect of a strong electric field on the spin‐lattice relaxation times of the conduction electrons and the relaxation time of the nuclei by hyperfine interaction with hot carriers are considered for various types of semiconductors. Formulae for the field‐enhanced nuclear magnetization, and for the relaxation times of the electronic and nuclear magnetic moments, are obtained as functions of the current density of the conduction electrons.