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Stacking Faults in TiC
Author(s) -
Venables J.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660150141
Subject(s) - transmission electron microscopy , nucleation , stacking , crystallography , materials science , partial dislocations , stacking fault , condensed matter physics , chemistry , nanotechnology , dislocation , nuclear magnetic resonance , physics , organic chemistry
TiC single crystals doped by diffusion with 100 ppm of boron have been examined by transmission electron microscopy. Stacking faults, approximately 1 μm wide, bounded by partial dislocations were observed in all doped samples. It is considered that the faults serve as nucleation sites for the “Mondrian precipitates” observed by Williams [1].