Premium
Photo‐Field‐Emission from High‐Resistance Silicon and Germanium
Author(s) -
Borzyak P. G.,
Yatsenko A. F.,
Miroshnichenko L. S.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660140218
Subject(s) - field electron emission , common emitter , materials science , germanium , optoelectronics , redistribution (election) , cathode , dielectric , field (mathematics) , silicon , engineering physics , electrical engineering , electron , physics , engineering , mathematics , politics , political science , pure mathematics , law , quantum mechanics
The characteristics of field and photo‐field‐emission from high‐resistance Si and Ge at low temperature are presented. On the basis of a dielectric field cathode model, the nature of the dark current and the conditions of voltage redistribution across the emitter and vacuum gap are discussed. The photofield emission characteristics are also discussed.