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Trapping Processes at Dislocations in Plastically Bent Germanium
Author(s) -
Jastrzębska M.,
Figielski T.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660140216
Subject(s) - photoconductivity , germanium , trapping , bent molecular geometry , dislocation , photocurrent , materials science , conduction band , condensed matter physics , logarithm , thermal conduction , transient (computer programming) , optoelectronics , optics , physics , composite material , electron , silicon , ecology , mathematical analysis , mathematics , quantum mechanics , computer science , biology , operating system
Transient and steady state photoconductivity in plastically bent germanium are investigated. Strong trapping effects are observed at low temperatures. Two main properties of monopolar photoconductivity at moderate illuminations are found; the logarithmic decay of the photocurrent, and the logarithmic lux‐ampere characteristics. Experimental results are interpreted on the basis of the barrier model of recombination at dislocations. Good aggreement between experiment and theory is obtained assuming that a dislocation forms a one dimensional energy band, the centre of which lies about 0.44 eV below the conduction band.