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Transverse Gain in GaAs Laser Structures
Author(s) -
Burrell G. J.,
Moss T. S.,
Hetherington A.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660140109
Subject(s) - laser , perpendicular , traverse , radiation , transverse plane , wavelength , optics , materials science , net gain , gain , optoelectronics , high gain antenna , physics , atomic physics , active laser medium , laser power scaling , geometry , mathematics , amplifier , geodesy , structural engineering , engineering , cmos , geography
Gain measurements are reported for radiation of wavelength 8466 Å propagating in a direction perpendicular to the junction of a GaAs injection laser operated at 80 °K. These results, used in conjunction with measurements of spontaneous emission, show that a gain of 2.3% is achieved at 7000 A/cm 2 . In thermal equilibrium 0.78% of the transmitted radiation is absorbed in traversing the active region, 135 A/cm 2 being required to off‐set this loss before net gain is obtained.
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