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Some Transport Properties of Semiconductors under Uniaxial Stress
Author(s) -
Grynberg M.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660130131
Subject(s) - condensed matter physics , seebeck coefficient , isotropy , birefringence , anisotropy , stress (linguistics) , magnetic field , cauchy stress tensor , physics , relaxation (psychology) , semiconductor , nernst equation , tensor (intrinsic definition) , materials science , electrical resistivity and conductivity , optics , classical mechanics , quantum mechanics , mathematics , geometry , psychology , social psychology , linguistics , philosophy , electrode
The calculations presented in this paper are valid for the III‐V and II‐VI semiconducting compounds with zinc‐blende structure. Under uniaxial stress the spherical energy surfaces become ellipsoidal. The galvanomagnetic coefficients for n‐type material are calculated following the method described by Żukotyński and Kołodziejczak, and assuming a dispersion law E = E ( k , \documentclass{article}\pagestyle{empty}\begin{document}$ \hat \varepsilon $\end{document} ) for these bands of the type obtained by Pikus. With the assumption of an isotropic relaxation time, formulae are obtained for the transverse magnetoresistance, thermoelectric power in a magnetic field, and Nernst‐Ettingshausen coefficient. By solving Maxwell's equations with a high‐frequency conductivity tensor, expressions are obtained for the Faraday effect, stimulated birefringence due to free carriers, and plasma frequency under uniaxial stress.