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Photochemical Reactions at Low Temperatures in CdS Single Crystals
Author(s) -
Korsunskaya N. E.,
Markevich I. V.,
Sheinkaman M. K.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660130103
Subject(s) - trapping , recombination , photoconductivity , atmospheric temperature range , range (aeronautics) , photochemistry , materials science , kinetics , electron , optoelectronics , atomic physics , chemistry , physics , thermodynamics , ecology , biochemistry , quantum mechanics , biology , composite material , gene
The investigation of glow curves for various conditions of illumination in CdS single crystals (previously annealed at high temperatures) shows that in the temperature range +20 to −100°C new trapping centers arise photochemically. In the same temperature range new “sensitizing” recombination centres, having small capture cross‐sections for electrons, also arise due to a photochemical reaction. This causes the photoconductivity to be increased by a factor of 2 to 100. The investigation of the kinetics of trapping and recombination processes by various methods enables several parameters to be determined for the new trapping and recombination centers.