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X‐Ray K‐Absorption and Emission Spectra of Phosphorus in Semiconducting A III B V Compounds
Author(s) -
Gusatinskii A. N.,
Nemov S. A.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650120220
Subject(s) - absorption (acoustics) , phosphorus , chemistry , absorption spectroscopy , analytical chemistry (journal) , emission spectrum , spectral line , ionic bonding , band gap , fluorescence , absorption band , semiconductor , atomic physics , ion , materials science , physics , optics , optoelectronics , organic chemistry , astronomy , composite material , chromatography
A study is made of fluorescent K β emission bands of phosphorus in the III‐V semiconductor compounds and red phosphorus and a comparison made with a previous study of the corresponding absorption spectra. The energy separation of the emission and absorption edges correlates with the forbidden band widths of the investigated compounds. The splitting of both the emission band and the main absorption maximum which is observed with the transition from elementary phosphorus to the III‐V compounds is presumably due to the presence of ionic bonding in the compounds. The displacement of the forbidden band centre in the compounds relative to its position in elementary phosphorus has helped to establish the negative charge on P atoms in InP and GaP; in BP this charge, even if present, is substantially smaller.