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Determination of Parameters of Complex Energy Bands in Semiconductors from Studies of Free Carrier Faraday Rotation, Voigt Effect, and Transport Properties
Author(s) -
Prosser V.,
Kužel R.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650120217
Subject(s) - faraday effect , semiconductor , valence band , condensed matter physics , diamond , free carrier , germanium , faraday cage , materials science , valence (chemistry) , rotation (mathematics) , physics , chemistry , optoelectronics , band gap , quantum mechanics , mathematics , magnetic field , silicon , geometry , composite material
Simultaneous measurements of magneto‐optical and transport properties can be used to obtain fundamental parameters of semiconductors with complex band structures. The derived formulae are applied to the case of the valence band in diamond and germanium.