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Point Defect Production During Jump Deformation of Zinc
Author(s) -
Anderson J. M.,
Brown A. F.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650120129
Subject(s) - slip (aerodynamics) , electrical resistivity and conductivity , materials science , resistive touchscreen , jump , crystallographic defect , zinc , condensed matter physics , yield (engineering) , deformation (meteorology) , composite material , metallurgy , physics , thermodynamics , electrical engineering , quantum mechanics , engineering
When zinc single crystals yield discontinuously the strain jumps are accompanied by proportionately large transient rises in electrical resistivity. A study of the larger jumps which correspond to slip displacements of ≃ 20μm and resistance increases of ≃ 0.1 μΩ shows that the defect responsible for the resistive transients decays with activation energy 0.32 ± 0.03 eV to traps about 0.1 μm apart. These figures are consistent with the defects being divacancies moving to dislocations within a slip band. The point defect concentration in the slipped regions exceeds 0.1%.
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