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Optical Modulation of Current in GeSi n—n Heterojunctions
Author(s) -
Yawata S.,
Anderson R. L.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650120127
Subject(s) - homojunction , heterojunction , photocurrent , electron , optoelectronics , materials science , condensed matter physics , physics , quantum mechanics
The I – V , characteristics, the C — V characteristics and the photocurrent spectra of GeSi n—n heterojunctions are consistent with a model in which a depletion region exists in each material. The depleted electrons reside in interface states which result from the mis‐match in lattice constants of the two materials. In this model, a notch exists in the valence band edge profile. Optically generated holes are trapped in the notch and the trapped holes modulate the device. The quantum efficiency of such a device compares favorably with that of a Si p—n homojunction.