Premium
Recovery of Al—Si Alloys Neutron Irradiated at 78 °K
Author(s) -
Ceresara S.,
Federighi T.,
Pieragostini F.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650110229
Subject(s) - annealing (glass) , irradiation , materials science , isothermal process , vacancy defect , neutron irradiation , electrical resistivity and conductivity , neutron , radiochemistry , crystallography , chemistry , metallurgy , nuclear physics , physics , thermodynamics , quantum mechanics
A set of Al‐Si alloys (0.1 to 0.78 at.% Si) are neutron irradiated at 78 °K at a fast dose ( E > 1 MeV) of 1.2 × 10 18 n/cm 2 . The recovery of electrical resistivity is then investigated by isochronal and isothermal annealing. The results are compatible with the view that both interstitials and vacancies interact with Si atoms. The former are trapped during irradiation at 78 °K and are released in stage II‐b; the latter are trapped during their annealing in stage III, forming mobile Si‐vacancy couples which, in turn, either migrate to small interstitial clusters where vacancies annihilate, or combine one another, giving rise to complex aggregates which are eliminated in stage IV.