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Electrical Resistivity and Thermoelectric Power of Stacking Faults in Gold
Author(s) -
Polák J.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650110219
Subject(s) - electrical resistivity and conductivity , seebeck coefficient , materials science , stacking , thermoelectric effect , stacking fault , vacancy defect , condensed matter physics , annealing (glass) , thermodynamics , metallurgy , composite material , electrical engineering , nuclear magnetic resonance , thermal conductivity , physics , dislocation , engineering
Pure gold wires are quenched from high temperatures into iced brine and the changes of electrical resistivity and thermoelectric power are measured simultaneously during isochronal annealing. Two recovery stages are found: the first one (at 50 °C) corresponds to vacancy clustering with the formation of stacking‐fault tetrahedra, the second one (at 650 °C) corresponds to the dissolution of the tetrahedra. It is found that the electrical resistivity due to stacking faults is Q S = (1.0 ± 0.2) × 10 −13 Ωcm 2 and the change of thermoelectric power per unit density of stacking faults Δ S S /β = (−2.9 ± 0.3) × 10 −14 Vcm/°K. Stacking faults, like vacancies, reduce the absolute thermoelectric power of gold. This behaviour is contrary to the effect of dislocations, which increase the thermoelectric power.