Spectral Response of the Photoeffects in InAs | Zendy

Mikhailova M. P. | Zendy; Nasledov D. N. | Zendy; Slobodchikov S. V. | Zendy

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Spectral Response of the Photoeffects in InAs

Author(s) -

Mikhailova M. P.,

Nasledov D. N.,

Slobodchikov S. V.

Publication year - 1965

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.19650110204

Subject(s) - photoconductivity , diffusion , materials science , recombination , analytical chemistry (journal) , atomic physics , physics , optoelectronics , chemistry , thermodynamics , chromatography , biochemistry , gene

The spectral response curves of photoconductivity and photoelectromagnetic and photovoltaic effects of a p‐n junction in InAs are used to estimate the following parameters: the ratio of the surface recombination velocity to the diffusion coefficient S / D and the minority carrier diffusion lengths L n and L p . S / D was found to vary from 1 × 10 3 to 2 × 10 4 cm −1 . L n and L p were estimated to be about some microns. The results agree with other data obtained by the authors.

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