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Spectral Response of the Photoeffects in InAs
Author(s) -
Mikhailova M. P.,
Nasledov D. N.,
Slobodchikov S. V.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650110204
Subject(s) - photoconductivity , diffusion , materials science , recombination , analytical chemistry (journal) , atomic physics , physics , optoelectronics , chemistry , thermodynamics , chromatography , biochemistry , gene
The spectral response curves of photoconductivity and photoelectromagnetic and photovoltaic effects of a p‐n junction in InAs are used to estimate the following parameters: the ratio of the surface recombination velocity to the diffusion coefficient S / D and the minority carrier diffusion lengths L n and L p . S / D was found to vary from 1 × 10 3 to 2 × 10 4 cm −1 . L n and L p were estimated to be about some microns. The results agree with other data obtained by the authors.