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Increase in Extinction Distance with Temperature in Silicon
Author(s) -
Thomas G.,
Levine E.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650110104
Subject(s) - extinction (optical mineralogy) , silicon , reflection (computer programming) , materials science , scattering , stacking , electron microscope , optics , molecular physics , condensed matter physics , optoelectronics , physics , nuclear magnetic resonance , computer science , programming language
High temperature electron microscopy experiments on stacking faults in silicon performed under controlled contrast conditions show that the extinction distance for the 220 reflection increases by about 30% over a 600 °C rise in temperature. This result is explained by the effect of temperature in reducing atomic scattering.