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Energy Gap Determination in Semiconductors by Electric‐Field‐Modulated Optical Absorption
Author(s) -
Frova A.,
Penchina C. M.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650090313
Subject(s) - semiconductor , electric field , band gap , germanium , absorption (acoustics) , materials science , field (mathematics) , optoelectronics , energy (signal processing) , atomic physics , optics , physics , silicon , quantum mechanics , pure mathematics , mathematics
A new technique is described for determining the band gap in semiconductors from measurements of the electric‐field‐modulated absorption of light (Franz‐Keldysh effect). This method is tc some extent more convenient than previous ones since it permits the use of rather thick samples. Yet, the precision is about as high as that achieved by other techniques. Experiments using this technique have been carried out in germanium. The direct energy gap is found to be 0.7990 ± 0.0005 eV at 305 °K and 0.8807 ± 0.0010 eV at 89 °K, in excellent agreement with the values reported by other authors.