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Dislocations as Traps for Holes in Germanium
Author(s) -
Figielski T.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650090226
Subject(s) - germanium , dislocation , condensed matter physics , photocurrent , photoconductivity , limiting , materials science , relaxation (psychology) , electron , acceptor , recombination , silicon , optoelectronics , physics , chemistry , mechanical engineering , psychology , social psychology , engineering , biochemistry , quantum mechanics , gene
A further development of the barrier model of recombination at dislocations is presented. It is shown that in spite of the tunnel effect, the barrier height is the main factor limiting the capture rate of electrons down to about 180 °K. Some features of photoconductivity in crystals with dislocations and their temperature‐dependences, are discussed (such as the lux‐ampere characteristics, and the relaxation of the photocurrent). It is shown how the density of dislocations and the position of the dislocation acceptor level can be estimated from experimental data.