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Electron Mirror Observations of Semiconductor Surfaces at Low Temperatures
Author(s) -
Igras E.,
Warmiński T.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650090109
Subject(s) - semiconductor , silicon , germanium , materials science , electron microscope , impurity , trapping , electron , range (aeronautics) , microscope , optics , optoelectronics , chemistry , physics , ecology , organic chemistry , quantum mechanics , composite material , biology
A new type of electron mirror microscope is described schematically. The microscope allows the observation of electrical micro‐fields on semiconductor surfaces in the temperature range 77 to 1300 °K. Preliminary results of observations on silicon surfaces at low temperatures are presented. It is suggested that the observed pictures can be interpreted in terms of surface fields resulting from the trapping of minority carriers. Results concerning impurity precipitation in silicon and germanium are also given.