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Photovoltaic Effect in CdS‐CdSe Heterojunctions
Author(s) -
Kandilarov B.,
Andreytchin R.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650080326
Subject(s) - photocurrent , heterojunction , photovoltaic effect , photovoltaic system , materials science , doping , optoelectronics , surface photovoltage , sign (mathematics) , anomalous photovoltaic effect , semiconductor , electrical engineering , physics , spectroscopy , mathematics , mathematical analysis , quantum mechanics , engineering
CdS–CdSe (n + –n and n–n + ) heterojunctions are made and the photovoltaic effect investigated. Both the sign and the magnitude of the photovoltage measured depends on the doping. The spectral dependence of the short‐circuit photocurrent is measured. The photovoltage is found to depend on the growth conditions.