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The Edge Emission in CdS Crystals
Author(s) -
Spear W. E.,
Bradberry G. W.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650080303
Subject(s) - photoconductivity , luminescence , valence band , enhanced data rates for gsm evolution , radiative transfer , materials science , range (aeronautics) , electron , atmospheric temperature range , atomic physics , electronic band , condensed matter physics , optoelectronics , optics , physics , band gap , thermodynamics , nuclear physics , telecommunications , computer science , composite material
In this paper the mechanism of the green edge emission in pure, undoped CdS crystals is investigated. First, a systematic study of photoconductive, transport and luminescent properties and their dependence on heat treatment (350 °C) has been carried out. The photoconductive measurements between 77 and 130 °K indicate that a class II centre ( S p ≫ S n ) lies 0.13 to 0.15 eV above the valence band. The experimental results are then compared with calculations based on a three centre model and carried out by electronic computer over a range of temperatures and centre densities. The observed luminescent properties can be predicted in agreement with experiment, but only if the radiative recombination takes place between a free electron and a hole trapped in the above centre (Schön‐Klasens model). The effect of heat treatment and the nature of these centres are briefly discussed.